In GaAs/GaAsSb Heterojunction TFET
نویسندگان
چکیده
Tunnel FETs are a promising alternate to MOSFETs for low power design due to the ability to scale threshold voltage and hence supply voltage, without increase in OFF currents. However, they suffer from low ON currents. Demonstrated here is theenhancement in ION in arsenide–antimonide staggered-gap heterojunction (hetj) tunnel field-effect transistors (TFETs) by engineering the effective tunneling barrier height Ebeff. Moderate-stagger GaAs0. 4Sb0.
منابع مشابه
Thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors
متن کامل
[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy
We report the GaAsSb bulk layers and GaAsSb/GaAs quantum wells (QWs) grown on (1 1 1)B GaAs substrates by gas source molecular beam epitaxy. We found that Sb composition in the GaAsSb epilayers is very sensitive to the substrate temperature. The composition drops from 0.35 to 0.16 as the substrate temperature increases from 450 to 550 1C. The [1 1 1]B-oriented GaAsSb epilayers show phase separa...
متن کاملEvaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation
In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage trans...
متن کاملPerformance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor
In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...
متن کاملPseudomorphic and metamorphic (Al)GaAsSb/(Al)InGaAs tunnel junctions for GaAs based Multi-Junction Solar Cells
Aim and approach Tunnel Junctions (TJs) are key devices for monolithic Multi-Junction Solar Cells (MJSCs), in which they ensure the series interconnection between the subcells. For GaAs based MJSCs, very low resistive (with peak tunneling current density Jpeak up to 10 kA/cm2) AlGaAs:C/GaInP:Te or AlGaAs:C/GaAs:Te have been recently developed by MOVPE using Te instead of Si as N-dopant making i...
متن کامل